Modeling
of carrier transport in semiconductors
In parallel
with the activity on numerical analysis, M. R. carried out
investigations on the
physics and modeling of carrier transport in semiconductors, starting
with studies
on majority- and minority-carrier lifetimes [12], measurements of
surface-states [61] and doping profile [14] by the G-V and C-V
technique. In particular, M. R. coauthored a number of papers proposing
an analytical
model for MOSFETs including drift and diffusion currents [13,64]. The
model was then extended to the case of amorphous silicon [120,122]. Of
particular relevance is the extension of the hydrodynamic model to the
full-band
case, along with a number of related investigations whose aim was an
accurate
modeling of the model's parameters, in essence, the relaxation times
for
average momentum, average energy, average energy flux of the carriers
[5,7,11,24,118,134],
and the impact-ionization coefficients [27,30,83,133]. The anisotropy
of the relaxation
times and of the carrier thermal conductivity has also been
investigated, using
higher order approaches like the
As indicated
above, M. R. had a role in several Projects funded by the European
Union, in
which the Department of Electronics (DEIS) of the