1. S. Graffi: Linearizzazione di un modulatore di frequenza a diodo varactor mediante varistori, Atti della Accademia delle Scienze dell'Istituto di Bologna, Rendiconti, XII, I, 1965.
2. S. Graffi: Teoria non lineare degli oscillatori con reti in parallelo, Atti della Accademia delle Scienze dell'Istituto di Bologna Rendiconti, XII, II, 1965.
3. L. Calandrino, S. Graffi, G. Immovilli: Noise power reduction through comparison with another statistically dependent noise, Alta Frequenza, XXXV, 11, 1966.
4. L. Calandrino, S. Graffi, G. Immovilli: Cross-correlation and statistical dependence between envelope and frequency deviation of a sine wave plus random noise, Alta Frequenza, XXXVI, 2, 1967.
5. L. Calandrino, S. Graffi, G. Immovilli: Recenti ricerche su una categoria di demodulatori di frequenza a correlazione ampiezza-fase, Rendiconti della LXVIII Riunione Annuale AEI, 1967.
6. S. Graffi: Some remarks on the effect of noise in sinchronized oscillators, Alta Frequenza, XXXVII, 8, 1968.
7. P. U. Calzolari, S. Graffi: Two-dimensional theory of the uniform-base transistor at any injection level, Alta Frequenza, XXXVIII, 2,1969.
8. P. U. Calzolari, S. Graffi: On the beta falloff in junction transistors, Proc. IEEE, 57, 7, 1969.
9. P. U. Calzolari, S. Graffi: Influence of the emitter crowding effect on the current gain falloff in junction transistors, Alta Frequenza, XXXVIII, 8, 1969.
10. P. U. Calzolari, S. Graffi, A. Mazzone: Circuiti equivalenti dei transistori ad effetto di campo a giunzione, Relazione LAMEL, Marzo 1970; High-frequency equivalent circuits of junction-gate field-effect transistors, Electronics Letters, 6, 18,1970.
11. P. U. Calzolari, S. Graffi: Sulla corrente di generazione in una giunzione p-n polarizzata in senso inverso, Relazione LAMEL, Giugno 1971; A Theoretical investigation on the generation current in silicon p-n junctions under reverse bias, Solid-State Electron., 15, 9, 1972.
12. P. U. Calzolari, S. Graffi: Evaluation on an approximated doping profile for diffused junctions from capacitance measurements, Electronics Letters, 7, 26, 1971.
13. P. U. Calzolari, S. Graffi, G. Pierini: Analisi numerica dei dispositivi a semiconduttore, Relazione LAMEL, Luglio 1970; A new program for the DC one- dimensional analysis of semiconductor devices, Alta Frequenza, XLI, 8, 1972; S. Bortolaia, P. U. Calzolari, S. Graffi: Analisi numerica di dispositivi a semiconduttore in regime dinamico di piccoli segnali, Relazione LAMEL, Settembre 1972.
14. P. U. Calzolari, S. Graffi, G. Pierini: A numerical analysis of the Schottky barrier, Alta Frequen za, XLI, 9, 1972.
15. P. U. Calzolari, S. Graffi, A.. Mazzone, C. Morandi: A simple method for the determination of bulk lifetime in MOS capacitors, ESSDERC, Lancaster, 1972.
16. P. U. Calzolari, S. Graffi, A.. Mazzone, C. Morandi: Bulk lifetime determination from current and capacitance transient response of MOS capacitors, Alta Frequenza, XLI, 11, 1972.
17. P. U. Calzolari, P. Ghigi, S. Graffi: Some considerations on the two-dimensional theory of drift transistors, Alta Frequenza, XLI, 11, 1972.
18. P. U. Calzolari, S. Graffi, C. Morandi: Effects of nonuniform doping on generation-lifetime measurements in MOS capacitors, Electronics Letters, 9, 12, 1973.
19. P. U. Calzolari, S. Graffi, C. Morandi: Field-enhanced carrier generation in MOS capacitors, ESSDERC, Munich, 1973.
20. P. U. Calzolari, S. Graffi: Minority carrier transport in metal-semiconductor junctions, Solid-State Electron., 16, 12, 1973.
21. P. U. Calzolari, S. Graffi, G. Pierini: Finite-difference and finite-element methods for the semiconductors flow equations, International Symposium on Finite Element Methods in Flow Problems, Swansea, 1974.
22. G. Baccarani, P. U. Calzolari, S. Graffi: Current transport in MSM devices, J. of Appl. Phys., 45, 1, 1974.
23. P. U. Calzolari, S. Graffi, G. Pierini:_ An accurate computer analvsis of relaxation effects in MOS capacitors, Alta Frequenza, XLIII, 7, 1974.
24. P. U. Calzolari, S. Graffi, G. Pierini: Analisi numerica dei dispositivi a semiconduttore, Cap. 15 di: A. S. Grove, Fisica e tecnologia dei dispositivi a semiconduttore, Franco Angeli editore, Milano 1974.
25. P. U. Calzolari, S. Graffi, C. Morandi: Field-enhanced carrier generation in MOS capacitors, Solid-State Electron., 17, 10, 1974.
26. P. U. Calzolari, S. Graffi, G. Pierini: Modeling relaxation phenomena in MOS capacitors: a numerical approach to surface state and field-enhanced generation effects, ESSDERC, Nottingham 1974.
27. G. Baccarani, P. U. Calzolari, S. Graffi, G.Soncini: Recent developments in Silicon-device technology at LAMEL, Alta Frequenza, XLIII, 10, 1974.
28. P. U. Calzolari, S. Graffi, G. Pierini: C.A..D. in semiconductor device problems, CAD 74, Imperial College, London, 1974.
29. P.U.Calzolari, S.Graffi, G.Masetti, M.Severi: Switched-capacitor concept for analog signal NMOS amplifier, Proc. of ESSCIRC 79, Southampton, 1979.
30. G.Cardinali, S.Graffi, M.Impronta, G.Masetti: DC MOSFET model for analogue circuit simulation employing process-empirical parameters, IEE Proceedings, Part I, vol. 129, N.2, 1982.
31. P.U.Calzolari, S.Graffi, G.Masetti, M.Severi: NMOS dynamic differential amplifier, IEE Proceedings, Part G, vol. 130, N.1, 1983.
32. P. U. Calzolari, S. Graffi: Elementi di Elettronica,Zanichelli, 1984.
33. P. U. Calzolari, S. Graffi: Circuiti elettronici integrati, voce del Dizionario delle Scienze Fisiche dell' Istituto Enciclopedia Italiana.
34. P. U. Calzolari, S. Graffi: Tubi a raggi catodici e cinescopi, voce del Dizionario delle Scienze Fisiche dell' Istituto Enciclopedia Italiana.
35. S. Graffi: Valvole ad alto vuoto, voce della Storia del XX secolo dell' Istituto Enciclopedia Italiana.
36. S. Graffi, G. Masetti, D. Golzio: Macromodelli di amplificatori operazionali per la simulazione degli effetti indotti da interferenze elettromagnetiche, Atti della 89a Riunione Annuale AEI, Capri, Ottobre 1988.
37. D.Golzio, S. Graffi, G.Masetti: New circuit modeling of operational amplifiers, Proc. of 1989 IEEE Int. Symposium on Electromagnetic Compatibility, Denver, 1989.
38. D.Golzio, S. Graffi, G.Masetti: New macromodel for the analysis of EMI effects in LF355 opamp circuits, Proc. of 1989 Int. Symposium on Electromagnetic Compatibility, Nagoya, Japan, 1989.
39. S. Graffi, G.Masetti, D.Golzio: New macromodel and measurement for the analysis of EMI effects in 741 opamp circuits, IEEE Trans. on EMC, vol. EMC-33, 1991.
40. D. Golzio, S. Graffi, Zs. M. V.-Kovács, G. Masetti: EMI-induced failures in integrated circuit operational amplifiers, Proc. of RELECTRONIC'91, Budapest, 1991.
41. P. Mattei, S. Graffi, Zs. M. V.-Kovács, G. Masetti: EMI-induced failures in integrated BiCMOS operational amplifiers, Proc. of ESREF'91, Bordeaux, 1991.
42. D. Golzio, S. Graffi, Zs. M. V.-Kovács, G. Masetti: Circuit Macromodels and large signal behaviour of FET-input operational amplifiers, Int. Jou. of Circuit Theory and Applications, vol. 20, 1992.
43. D.Golzio, S. Graffi, Zs.M.Kovács, G.Masetti: Correlation between EMI-induced failures and large-signal response of FET-input Op-Amps, Proc. of ESREF 90, Valenzano, 2-5 Oct. 1990; Correlation between EMI-induced failures and large-signal response of FET-input Op-Amps, Quality and Reliability Engineering Int., Dec. 1991.
44. S.Graffi, Zs. M. V.-Kovācs, G. Masetti, D. Golzio: EMI-induced failures in integrated circuit operational amplifiers, Microelectronics and Reliability, vol.32, 1992.
45. G. F. Dalla Betta, S. Graffi, G. Masetti, Zs. M. Kovācs: Design of a CMOS analog programmable cellular neural network, Proc. of CNNA'92, Munich (Germany), 1992.
46. D. Golzio, S.Graffi, Zs. M. V.-Kovācs, G. Masetti: OpAamp macromodel design techniques for EMI effects simulation, Proc. of the Electromagnetic Compatibility Symposium, Zurich, 1993.
47. G. F. Dalla Betta, S. Graffi, G. Masetti, Zs. M. Kovācs: CMOS Implementation of an analogically programmable CNN, IEEE Trans. on Circuits and Systems, vol. CAS-40, 1993.
48. Zs. M. V.-Kovācs, A. Benedetti, S.Graffi, G. Masetti: A New Multilevel Simulator for MOS Integrated Circuits, Proc. of Int. Workshop on VLSI Process and Device Technology (VPAD), Nara, Japan, 1993.
49. D. Golzio, S. Graffi, Zs. M. Kovācs and G. Masetti: Correlation between EMI- induced failures and large-signal response of FET-input Op-Amps, Quality and Reliability Engineering Int., vol. 9, 1993.
50. G. Masetti, D. Golzio, S.Graffi, Zs. M. V.-Kovācs: Failures Induced on Analog Integrated Circuits by EMI-Conveyed signals, Invited Paper, Proc. of ESREF'93 (Bordeaux), 1993.
51. Zs. M. V.-Kovācs, A. Benedetti, S. Graffi, G. Masetti: A New Multilevel Simulator for MOS Integrated Circuits, IEICE Trans. Electron., Japan, vol. E77-C, 1994.
52. P. Mattei, S. Graffi, Zs. M. V.-Kovācs, G. Masetti: Design of Integrated BiCMOS Operational Amplifiers with Low-Probability EMI-Induced Failures, Microelectronics and Reliability, 1995.
53. A. Sani, S. Graffi, G. Masetti, G. Setti: Design of CMOS Cellular Neural Networks Operating at Several Supply Voltages, Proc. of CNNA'94, Roma, 1994.
54. A. Piovaccari, S. Graffi, G. Masetti: A low-voltage low-power CMOS current conveyor, Proc. EECTD'95, Istanbul, 1995.
55. G. Masetti, S. Graffi, D. Golzio, Zs. M. V.-Kovācs: Failures Induced on Analog Integrated Circuits by Conveyed Electromagnetic Interferences: A Review, Microelectronics and Reliability, vol. 35, 1995.
56. A. Leone, G. Masetti, S. Graffi: Problems in Modelling Multiterminal Bipolar Devices, Proc. of 20th Int. Conf. on Microelectronics, (MIEL'95), Nis, 1995.
57. S. Graffi, G. Masetti, A. Piovaccari, D. Ricci, M. Tartagni: Criteria to Reduce Failures Induced from Conveyed Electromagnetic Interferences on CMOS Operational Amplifiers, Proc. of 9th RELECTRONIC (RELECTRONIC'95), Budapest, Hungary, 1995
58. S. Graffi, G. Masetti, A. Piovaccari, Low EMI Susceptibility is an Acceptable Demand fo Low Supply Voltage CMOS Integrated Operational Amplifiers?, Proc. of the International Symposium on Electromagnetic Compatibility (EMC'96) ,17--20 Sep. 1996, Rome, Italy.
59. S. Graffi, G. Masetti, A. Piovaccari, Criteria to Reduce Failures Induced from Conveyed Electromagnetic Interferences on CMOS Operational Amplifier, Microelectronics & Reliability , 1996.
60. S. Graffi, G. Masetti, A. Piovaccari and M. Tartagni, Failures Induced on Operational Amplifiers by EMI, invited paper for the Symposium on Electromagnetic Compatibility ,Oct 1996, Belgrad, Serbia.
61. N. Speciale, G. Onofri, S. Graffi, G. Masetti, S. Palara and G. Privitera, A New DC Model for Five Terminals Bipolar Devices Used in Smart Power IC, Proc. of Int. Simp. on Circuits and Systems (ISCAS'96), May 1996, Atlanta, USA.
62. N. Speciale, A. Leone, S. Graffi and G. Masetti, A Unified Approach for Modeling Multiterminal Bipolar and MOS Devices in Smart-Power Technologies, in ESSDERC'97 Proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 1997, pp. 312--315.
63. Leone, N. Speciale, S. Graffi, G. Masetti and V. Graziano, Modeling Parasitic Bipolar Devices in Advanced Smart-Power Technologies, in BCTM'97 Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis, Minnesota, September 28-30, 1997, pp.127-130
64. Sergio Graffi, Gianluca Setti, Circuit Analysis Using Linearization, in Wiley's Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons Inc. Publishers, 1998.
65. R. Rovatti, G. Setti, S. Graffi, "Chaotic FM and AM of Clock Signals for Improved EMI Compliance," IEEE/IEICE International Symposium on Nonlinear Theory and its Applications (NOLTA'99), Hawaii, USA, November 1999.
66. R. Rovatti, G. Setti, S. Graffi, "Chaos-Based FM of Clock Signals for EMI Reduction," 14th European Conference on Circuit Theory and Design (ECCTD'99), pp. 373-376, Stresa, Italy, August 1999.