Elena Gnani was born on January, 16th, 1975. She received the degree in
Electrical Engineering from the University of Bologna, Italy, in 1999.
Since October 1999 she has been working at the Department of
Electronics (DEIS) of the same University in the field
semiconductor-device modeling and simulation. She is currently
attending the Ph.D. course in Electrical Engineering at the University
of Bologna.
Research Interests and Activities
Numerical simulation of semiconductor devices.
Physics of carrier transport in semiconductors.
Transport Properties of amorphous silicon dioxide.
Modeling of parasitic elements within the BCD technology.