Part of the activity has dealt with the investigation of the closure conditions for the hydrodynamic model, obtaining a new formulation with does not resort to phenomenological relationships.
The hydrodynamic model has been generalized to include a general description of the silicon-band structure. In the same formulation the general expressions for a moment of rank $N$ have been obtained.
The coefficients of the models as, for example, the relaxation times associated to each moment, have been computed using a spatially-homogeneous solver of the spherical-harmonics expansion of the Boltzmann Transport Equation.
At the same time, the moments method has been applied to the system of equations obtained from spherical-harmonics expansion of the BTE, according to two different formulations. The obtained energy-transport models have been implemented in a two-dimensional device simulator. Thus it has been possible to compare the results of the energy-transport models with those of the spherical-harmonics expansion method and of the hydrodynamic model.
Microelectronics Group Home Page | Staff |
Research Activities | Teaching Activity |
Publications | Local Stuff |
DEIS Home Page | University of Bologna Home Page |