Numerical analysis of amorphous and polycrystalline silicon semiconductor devices

This research activity, which started in 1991, is related to the physics and numerical analysis of semiconductor devices and in particular to the study of the electron-transport phenomena in amorphous and polycrystalline semiconductors, which are strongly influenced by the presence of bulk trap states. The developed models have been inserted into the device simulator HFIELDS and then applied to the analysis of thin-film devices. The activity of 1995 dealt with these topics:


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