The problems related with the hydrodynamic simulation of semiconductor devices operating at liquid nitrogen temperature are investigated, with emphasis on the numerical aspects. A discretization strategy is proposed which allows one to incorporate in a conventional hydrodynamic program typical low temperature effects, such as Fermi statistics and incomplete ionization, as well as proper boundary conditions. The suggested technique has been implemented in the hydrodynamic version of the program HFIELDS, and it has been tested by means of the simulation of a submicron n-channel MOSFET.
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