Bibtex entry:

@article{ieeeTCAD:Leo94,
    key={ieeeTCAD:Leo94},
    keywords={hydrodynamic transport model, low temperature},
    author={A. Leone and A. Gnudi and G. Baccarani},
    title={Hydrodynamic Simulation of Semiconductor Devices Operating
at Low Temperature},
    journal={IEEE Trans. CAD},
    month=nov,
    year=1994,
    pages={1400--1408},
    abstract={
The problems related with the hydrodynamic simulation of
semiconductor devices operating at liquid nitrogen temperature are
investigated, with emphasis on the numerical aspects.
A discretization strategy is proposed which allows one to incorporate
in a conventional hydrodynamic program
typical low temperature effects,
such as Fermi statistics and incomplete
ionization, as well as proper boundary conditions.
The suggested technique has been implemented in the hydrodynamic
version of the program HFIELDS, and it has been tested by means of the
simulation of a submicron n-channel MOSFET.},
}

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