University of Bologna

Dipartimento di Elettronica, Informatica e Sistemistica

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MOSFET Threshold Extraction Circuit

N.Manaresi and A. Gnudi and E.Franchi and G.Baccarani


A novel method for the extraction of MOST threshold voltage ($V_T$) is presented. It is based on a self-biasing loop and it allows to obtain an output voltage equal to the $V_T$ of either n-MOS or p-MOS transistors without any restriction on the particular type of well.

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