The circuit simulation of multiterminal bipolar devices must account for parasitic devices. Abrupt changes of the substrate potential can bias the parasitics in forward or reverse normal region with possible positive feedback regenerative processes that can damage the device. The correct behaviour of bipolar junction transistor operating in reverse region can not be correctly characterized by the Gummel-Poon model. This work introduces an integration of the basic Gummel-Poon structure able to model the correct shape of the reverse current gain over large variation of the bias voltage.

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