Bibtex entry:

@inproceedings{Miel95:Leo95,
   keywords={smart-power bipolar device modeling},
   author="A. Leone and S. Graffi and G. Masetti",
   title="Problems in modelling multiterminal devices",
   key={Miel95:Leo95},
   booktitle={Proc. of MIEL95},
   year=1995,
   abstract={
The circuit simulation of multiterminal bipolar devices must account
for parasitic devices. Abrupt changes of the substrate potential can bias
the parasitics in forward or reverse normal region with
possible positive feedback regenerative processes that can damage the
device.  The correct behaviour of bipolar junction transistor
operating in reverse region can not be correctly characterized by the
Gummel-Poon model.  This work introduces an integration of the
basic Gummel-Poon structure able to model  the correct shape of the
reverse current gain over large variation of the bias voltage.},
}

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